考虑硅通孔的三维集成电路最高层温度模型
A Thermal Model for Top Layer of Three-dimensional Integrated Circuits with Through Silicon Via
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摘要: 针对三维集成电路最高层芯片,引入硅通孔面积比例因子r,提出了考虑硅通孔的温度解析模型.Matlab分析表明,在芯片堆叠层数及芯片工作状态相同的情况下,考虑硅通孔之后的芯片温度比未考虑硅通孔时要低;r越大,芯片温度越低;当芯片堆叠层数较多且r较小时,温度随着r的减小急剧上升;对于8层的三维集成电路,硅通孔面积比例因子的最佳范围为0.5%~1%.Abstract: With through silicon via(TSV) area scale factor r,an analytical thermal model for top layer of three-dimensional integrated circuits(3D IC) taking TSV into account was proposed.It is shown that temperature is lower after considering TSVs under same working conditions;the greater the scale factor r,the lower the temperature is;For more layers and smaller r,temperature increases sharply with decrease of r;The best range of TSV area ratio factor r is 0.5% to 1% for an 8-layer 3D IC.