功率MOS器件单粒子栅穿效应的等效电路模拟方法

EQUIVALENT CIRCUITS SIMULATION FOR SINGLE EVENT GATE RUPTURE OF POWER MOSFETs

摘要: 根据电路模拟软件PSPICE内建元器件模型,建立了功率MOS器件单粒子栅穿效应的等效电路模型和模型参数提取方法,对VDMOS器件的单粒子栅穿效应机理进行了电路模拟和分析,模拟结果与文献中的实验数据相符合,表明所建立的等效电路模拟方法是可靠的。

Abstract: A new model is established to perform simulation for Single-Event Gate-Rupture of power MOSFETs in use of PSPICE circuit simulation software. The application results have a very good agreement with the corresponding data in published articles.