石墨烯上空洞的形成及其电子结构性质: 第一性原理计算

Formation of Holes in Graphene and Their Electronic Properties: First-principles Calculations

  • 摘要: 采用基于密度泛函理论的第一性原理方法, 研究石墨烯上空洞的形成及其电子结构性质。计算碳原子的脱去个数N为1至19个的所有空洞结构。结果显示: 随着空洞的不断增大(N=1, 2, …, 19), 体系的电子结构表现出丰富的性质: 有金属性、半金属性和半导体性等。结果发现: 金属性的空洞体系在空洞边缘都存在碳悬挂键, 而且都具有弱磁性; 在空洞边缘不存在碳悬挂键的体系中, 仍然可以表现为半金属性、金属性和半导体性。对部分体系的能带结构中出现的平带的电子结构进行仔细的分析, 第一性原理的分子动力学计算表明, 脱出19个碳原子而形成的空洞在热力学上是稳定的。

     

    Abstract: By using the first-principles method based on the density functional theory, the formation of a hole on graphene and their electronic structures properties are studied. We have calculated all the structures of holes where number N of carbon atoms (N=1 to 19) are removed from graphene. The results suggest that, as the holes get bigger (N=1, 2, …, 19.), the electronic structures of the system show rich characteristics: metallic, semimetal and semiconductor properties. The calculations show that all the metallic hole systems have dangling bonds at the edge of the holes, and they are weak magnetic if the system is metallic. For the systems with no dangling bond at the edge of the hole, the system can still show semi-metallic, metallic and semiconducting properties. It is particularly interesting that flat bands appear in the band structures of some systems, and we have made a relatively detailed analysis of the electronic structures of the flat bands. In addition, first-principles molecular dynamics simulations show that the hole formed by the removal of 19 carbon atoms is thermodynamically stable.

     

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