空位缺陷调控K2NaCoCl6和K2NaInCl6双钙钛矿的光电性能

Vacancy defect Regulation the Optoelectronic Properties of K2NaCoCl6 and K2NaInCl6 Double Perovskites

  • 摘要: 双钙钛矿材料(A2BB'X6)因其环境友好、结构稳定和光电性能可调等优点,成为替代铅基钙钛矿的重要候选材料。本文基于八面体因子(μ)和容差因子(t)筛选出14种结构稳定的K2NaB'X6(B' = Sc, Y, Al, Co, Sb, Ga, In;X = F, Cl, Br)型双钙钛矿材料,采用第一性原理密度泛函理论(DFT)系统研究其能带结构、态密度、光学性质、载流子有效质量和激子结合能。研究结果表明,K2NaCoCl6等六种材料具有直接带隙,其值位于1.05–2.97 eV区间,适合作为光吸收层。进一步引入空位缺陷(VK、VNa、VB'、VX)后发现,Cl空位(VCl)最易形成且可诱导材料金属化;K、Na空位可增强可见光区光吸收能力;Co空位降低激子结合能,有利于激子解离。本研究揭示了空位缺陷对双钙钛矿材料光电性质的调控机制,为无铅钙钛矿光电器件的材料设计提供了理论依据。

     

    Abstract: Double perovskite materials (A2BB'X6) have emerged as promising candidates to replace lead-based perovskites due to their environmentally friendly nature, structural stability, and tunable optoelectronic properties. In this study, 14 structurally stable K2NaB'X6 (B' = Sc, Y, Al, Co, Sb, Ga, In; X = F, Cl, Br) double perovskites were screened based on the octahedral factor (μ) and tolerance factor (t). Their electronic band structures, density of states, optical properties, carrier effective masses, and exciton binding energies were systematically investigated using first-principles density functional theory (DFT). Results show that the six materials, including K2NaCoCl6, possess direct bandgaps ranging from 1.05 to 2.97 eV, making them suitable for use as light-absorption layers. Further introduction of vacancy defects (VK, VNa, VB', VX) revealed that Cl vacancies (VCl) are the most easily formed and can induce metallization in the materials. K and Na vacancies enhance light absorption in the visible region, while Co vacancies reduce the exciton binding energy, facilitating exciton dissociation. This study elucidates the regulatory mechanism of vacancy defects on the optoelectronic properties of double perovskite materials, providing a theoretical basis for the design of lead-free perovskite optoelectronic devices.

     

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