DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi. A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION[J]. Chinese Journal of Computational Physics, 2001, 18(6): 497-500.
Citation:
DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi. A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION[J]. Chinese Journal of Computational Physics, 2001, 18(6): 497-500.
DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi. A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION[J]. Chinese Journal of Computational Physics, 2001, 18(6): 497-500.
Citation:
DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi. A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION[J]. Chinese Journal of Computational Physics, 2001, 18(6): 497-500.
A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION
A charge conservation statistics enhancement method used in semiconductor divice Monte Carlo simulation is approached,which smoothes the charge fluctuation caused by the statistics enhancement, and keeps the continuation of cross edge charge flow. As an example, Schottky barrier diode characteristics is simulated using this method.
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