量子蒙特卡罗方法计算金刚石与单晶硅中的单空位正电子湮没寿命

Quantum Monte Carlo Method for Calculating Mono–Vacancy Positron Annihilation Lifetime in Diamond and Single–Crystal Silicon

  • 摘要: 采用量子蒙特卡罗方法计算金刚石与单晶硅单空位缺陷的正电子湮没寿命,突破传统二体密度泛函理论的经验近似局限。通过直接求解多体薛定谔方程并结合变分与扩散蒙特卡罗方法,构建Jastrow–Slater多体波函数优化体系,基于64–1原子超胞模型实现精确计算。结果显示:金刚石单空位湮没寿命为149.4±3.9 ps,与实验值152 ps高度吻合;单晶硅计算结果287.4±3.6 ps,接近实验范围270 ps–282 ps,优于传统方法。电子–正电子密度分布揭示缺陷中心局域特性,验证多体量子效应描述能力。通过消除关联泛函近似误差,实现误差范围量化控制。研究证实量子蒙特卡罗在材料缺陷表征中的方法学突破,为复杂体系提供高精度计算框架。

     

    Abstract: This study employs the Quantum Monte Carlo (QMC) method to calculate positron annihilation lifetimes for monovacancy defects in diamond and monocrystalline silicon, overcoming the empirical approximations inherent in conventional two–component density functional theory. By directly solving the many–body Schrödinger equation through variational and diffusion Monte Carlo approaches, we construct an optimized Jastrow–Slater many–body wavefunction system based on a 64–1 atom supercell model. Results demonstrate: diamond monovacancy annihilation lifetime of 149.4±3.9 ps, closely aligning with the experimental value of 152 ps; silicon calculation yields 287.4±3.6 ps, approaching the experimental range of 270 ps–282 ps and outperforming traditional methods. Electron–positron density distributions reveal localized characteristics at defect centers, validating the method's capability to describe many–body quantum effects. Through elimination of correlation functional approximation errors, this approach achieves quantitative error range control. The research confirms QMC's methodological breakthrough in material defect characterization, establishing a high–precision computational framework for complex systems.

     

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